MDD(Microdiode Semiconductor) MDD20N50F

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD20N50F

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)50.5nC@10V
Output Capacitance(Coss)263pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation37.8W
RDS(on)230mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)19pF
Number1 N-channel
Input Capacitance(Ciss)3.078nF
TypeN-Channel

Technical details

N-Channel 500V 20A 37.8W Through Hole TO-220F

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