MDD(Microdiode Semiconductor) MDD13N50F

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD13N50F

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Specifications

Gate Charge(Qg)37nC
Drain to Source Voltage500V
Current - Continuous Drain(Id)13A
Output Capacitance(Coss)190pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 500V 13A 50W Through Hole TO-220F

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