MDD(Microdiode Semiconductor) MDD12N60F

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD12N60F

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)40.8nC
Output Capacitance(Coss)163pF
Current - Continuous Drain(Id)12A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)7.2pF
RDS(on)530mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.96nF
TypeN-Channel

Technical details

N-Channel 600V 12A 42W Through Hole TO-220F

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