MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD10N60F
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 31.4nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 138.2pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 40W |
| RDS(on) | 650mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.62nF |
| Type | N-Channel |
N-Channel 600V 10A 40W Through Hole TO-220F