MDD(Microdiode Semiconductor) MDD100N03D

MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD100N03D

No reviews yet — be the first to review MDD(Microdiode Semiconductor) MDD100N03D.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)366pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3.9W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 30V 100A 3.9W Surface Mount TO-252

Related FETs & Power MOSFETs