MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN MDD06P03C
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| Output Capacitance(Coss) | 111pF |
|---|---|
| Pd - Power Dissipation | 1.25W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 25nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 27mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 890pF |
1.25W 30V 1.5V 27mΩ@10V 1 P-Channel P-Channel SOT-23-3L Single FETs, MOSFETs RoHS