MDD(Microdiode Semiconductor) DTA114ECA

MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN DTA114ECA

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain30
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor10kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1.2
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV

Technical details

50V 30 100mA 1 PNP Pre-Biased PNP 200mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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