MDD(Microdiode Semiconductor) · FETs & Power MOSFETs · MPN BSS123
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| Gate Charge(Qg) | 1.61nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 32pF |
N-Channel 100V 200mA 350mW Surface Mount SOT-23