MCC SIL03N10A-TP

MCC · FETs & Power MOSFETs · MPN SIL03N10A-TP

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)26nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.07nF

Technical details

100V 3A 1.1V 1.5W 120mΩ@10V 1 N-channel SOT-23-6L Single FETs, MOSFETs RoHS

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