MCC SIL03N10-TP

MCC · FETs & Power MOSFETs · MPN SIL03N10-TP

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Specifications

Configuration-
Gate Charge(Qg)19.2nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)810pF

Technical details

100V 3A 2.5V 1 N-channel SOT-23-6L Single FETs, MOSFETs RoHS

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