MCC · FETs & Power MOSFETs · MPN SI5618-TP
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 52pF |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 830mW |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
60V 1.9A 3V 830mW 150mΩ@10V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS