MCC SI3139KS-TP

MCC · FETs & Power MOSFETs · MPN SI3139KS-TP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)860pC@0V
Current - Continuous Drain(Id)600mA
Output Capacitance(Coss)16pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)850mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)11pF
Input Capacitance(Ciss)40pF
TypeP-Channel

Technical details

20V 600mA 1.1V 350mW 850mΩ@4.5V P-Channel SOT-23 Single FETs, MOSFETs RoHS

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