MCC SI3139KDWA-TP

MCC · FETs & Power MOSFETs · MPN SI3139KDWA-TP

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Specifications

Current - Continuous Drain(Id)600mA
Pd - Power Dissipation150mW
RDS(on)850mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)11pF
Number2 P-Channel
Input Capacitance(Ciss)40pF
Gate Charge(Qg)860pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)16pF

Technical details

600mA 150mW 850mΩ@4.5V 1.1V 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS

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