MCC SI2429DW-TP

MCC · FETs & Power MOSFETs · MPN SI2429DW-TP

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Specifications

Current - Continuous Drain(Id)1.5A
Pd - Power Dissipation450mW
RDS(on)260mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Gate Charge(Qg)3nC@10V
Operating Temperature-55℃~+150℃

Technical details

1.5A 450mW 260mΩ@1.8V 1.1V SOT-363 FET, MOSFET Arrays RoHS

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