MCC SI2312HE3-TP

MCC · FETs & Power MOSFETs · MPN SI2312HE3-TP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)60nC@4.5V
Output Capacitance(Coss)114pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
RDS(on)31.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)102pF
Input Capacitance(Ciss)668pF
TypeN-Channel

Technical details

N-Channel 20V 5A 1.25W Surface Mount SOT-23

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