MCC SI2312B-TP

MCC · FETs & Power MOSFETs · MPN SI2312B-TP

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)21mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

20V 6.8A 500mV 1.25W 21mΩ@4.5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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