MCC · FETs & Power MOSFETs · MPN SI2312-TP
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| RDS(on) | 41mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 668pF |
N-Channel 20V 5A 1.25W Surface Mount SOT-23