MCC SI2310AHE3-TP

MCC · FETs & Power MOSFETs · MPN SI2310AHE3-TP

No reviews yet — be the first to review MCC SI2310AHE3-TP.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10.27nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation1.2W
RDS(on)120mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)41pF
Number1 N-channel
Input Capacitance(Ciss)409pF

Technical details

N-Channel 60V 3A 1.2W Surface Mount SOT-23

Related FETs & Power MOSFETs