MCC · FETs & Power MOSFETs · MPN SI2305BHE3-TP
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 9.3nC |
| Output Capacitance(Coss) | 109pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 80mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 770pF |
| Type | P-Channel |
20V 4.2A 900mV 1.4W 80mΩ@1.8V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS