MCC · FETs & Power MOSFETs · MPN SI2129DW-TP
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| Current - Continuous Drain(Id) | 1A |
|---|---|
| RDS(on) | 250mΩ@1.8V |
| Pd - Power Dissipation | 243mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 327pF |
| Gate Charge(Qg) | 4.5nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 62pF |
1A 250mΩ@1.8V 243mW 1V 2 P-Channel SOT-363 FET, MOSFET Arrays RoHS