MCC · FETs & Power MOSFETs · MPN SI2102AHE3-TP
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| Drain to Source Voltage | 20V |
|---|---|
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 98mΩ@2.5V |
| Type | N-Channel |
20V 2A 1.1V 350mW 98mΩ@2.5V N-Channel SOT-323 Single FETs, MOSFETs RoHS