MCC SI2102AHE3-TP

MCC · FETs & Power MOSFETs · MPN SI2102AHE3-TP

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Specifications

Drain to Source Voltage20V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation350mW
RDS(on)98mΩ@2.5V
TypeN-Channel

Technical details

20V 2A 1.1V 350mW 98mΩ@2.5V N-Channel SOT-323 Single FETs, MOSFETs RoHS

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