MCC · FETs & Power MOSFETs · MPN SI2102A-TP
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| Gate Charge(Qg) | 3.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 98mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
| Type | N-Channel |
20V 3A 1V 200mW 98mΩ@2.5V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS