MCC · FETs & Power MOSFETs · MPN SI01P10-TP
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| Gate Charge(Qg) | 7.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 630mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 770mW |
| Reverse Transfer Capacitance (Crss@Vds) | 14.3pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 342pF |
P-Channel 100V 0.63A 0.77W Surface Mount SOT-23