MCC PZT5551-TP

MCC · Transistors (BJTs) · MPN PZT5551-TP

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain250
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 160V 0.6A 300MHz 1W Surface Mount SOT-223

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