MCC MSJP20N65-BP

MCC · FETs & Power MOSFETs · MPN MSJP20N65-BP

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)39nC@10V
Output Capacitance(Coss)61pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation151W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)170mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.724nF
TypeN-Channel

Technical details

650V 20A 4.5V 151W 170mΩ@10V 1 N-channel N-Channel TO-220AB(H) Single FETs, MOSFETs RoHS

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