MCC · FETs & Power MOSFETs · MPN MSJP11N65A-BP
No reviews yet — be the first to review MCC MSJP11N65A-BP.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 380mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 774pF |
| Type | N-Channel |
650V 11A 4V 83W 380mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS