MCC MSJB17N80-TP

MCC · FETs & Power MOSFETs · MPN MSJB17N80-TP

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation181W
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.83nF

Technical details

800V 17A 4V 181W 290mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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