MCC MMBTH10-TP

MCC · Transistors (BJTs) · MPN MMBTH10-TP

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
Pd - Power Dissipation225mW
DC Current Gain60
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)650MHz
typeNPN

Technical details

25V 225mW 60 50mA NPN SOT-23 Bipolar RF Transistors RoHS

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