MCC · FETs & Power MOSFETs · MPN MCU18P10YHE3-TP
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| Drain to Source Voltage | 100V |
|---|---|
| Output Capacitance(Coss) | 111pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 73.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF |
| RDS(on) | 110mΩ@10V |
| Input Capacitance(Ciss) | 1.014nF |
| Type | P-Channel |
100V 18A 2.5V 73.5W 110mΩ@10V P-Channel DPAK(TO-252) Single FETs, MOSFETs RoHS