MCC · FETs & Power MOSFETs · MPN MCT04N10B-TP
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 1.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.143nF |
N-Channel 100V 4A 1.25W Surface Mount SOT-223