MCC MCT04N10-TP

MCC · FETs & Power MOSFETs · MPN MCT04N10-TP

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Specifications

Gate Charge(Qg)15.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)690pF

Technical details

100V 3.7A 2.5V 115mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS

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