MCC MCMN2014HE3-TP

MCC · FETs & Power MOSFETs · MPN MCMN2014HE3-TP

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)60nC@8V
Output Capacitance(Coss)228pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)201pF
RDS(on)8mΩ@8V
Number1 N-channel
Input Capacitance(Ciss)1.337nF
TypeN-Channel

Technical details

12V 15A 1.1V 2.4W 8mΩ@8V 1 N-channel N-Channel DFN2020-6LE Single FETs, MOSFETs RoHS

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