MCC · FETs & Power MOSFETs · MPN MCB160N10Y-TP
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 223W |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.803nF |
100V 160A 1V 223W 3.4mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS