MCC BSS8402DW-TP

MCC · FETs & Power MOSFETs · MPN BSS8402DW-TP

No reviews yet — be the first to review MCC BSS8402DW-TP.

Specifications

Current - Continuous Drain(Id)130mA
Pd - Power Dissipation200mW
RDS(on)3.75Ω@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Technical details

130mA 200mW 3.75Ω@10V 2V 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs