MCC BC857BSHE3-TP

MCC · Transistors (BJTs) · MPN BC857BSHE3-TP

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Specifications

Current - Collector Cutoff100nA
DC Current Gain220
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))650mV
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

220 45V 200mW PNP 200mA SOT-363 Bipolar Transistor Arrays RoHS

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