MATSUKI · FETs & Power MOSFETs · MPN MEE7816S-G
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 10.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 16.7W |
| RDS(on) | 100mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 314pF |
| Type | N-Channel |
N-Channel 100V 10.2A 16.7W Surface Mount DFN(3x3)