MATSUKI MEE4294-G

MATSUKI · FETs & Power MOSFETs · MPN MEE4294-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)11.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)15.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.071nF
TypeN-Channel

Technical details

N-Channel 100V 11.3A 2.8W Surface Mount SOP-8

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