MATSUKI · FETs & Power MOSFETs · MPN MEE15N10
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| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 19.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 314pF |
| Type | N-Channel |
N-Channel 100V 19.8A 62.5W Surface Mount TO-252