MATSUKI ME95N03T

MATSUKI · FETs & Power MOSFETs · MPN ME95N03T

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)88A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)127pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2.56nF

Technical details

N-Channel 30V 88A 75W Through Hole TO-220

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