MATSUKI · FETs & Power MOSFETs · MPN ME95N03-G
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| Gate Charge(Qg) | 68nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 54.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 304pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.217nF |
30V 100A 1V 54.4W 2.6mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS