MATSUKI ME85P03

MATSUKI · FETs & Power MOSFETs · MPN ME85P03

No reviews yet — be the first to review MATSUKI ME85P03.

Specifications

Gate Charge(Qg)88nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)432pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)372pF
RDS(on)11mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.887nF
TypeP-Channel

Technical details

P-Channel 30V 80A 83W Surface Mount TO-252-2(DPAK)

Related FETs & Power MOSFETs