MATSUKI · FETs & Power MOSFETs · MPN ME8205E-G
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| Gate Charge(Qg) | 21.9nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 360pF |
20V 1V 1.3W 2 N-Channel SOT-26 Single FETs, MOSFETs RoHS