MATSUKI · FETs & Power MOSFETs · MPN ME8107-G
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| Gate Charge(Qg) | 58nC@4.5V |
|---|---|
| Drain to Source Voltage | 35V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 242pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.33nF |
35V 14A 1V 2.5W 5.5mΩ@10V 1 P-Channel SOP-8 Single FETs, MOSFETs RoHS