MATSUKI ME80N75T

MATSUKI · FETs & Power MOSFETs · MPN ME80N75T

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Specifications

Gate Charge(Qg)27nC@4.5V
Drain to Source Voltage75V
Current - Continuous Drain(Id)93A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)144pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.2nF

Technical details

N-Channel 75V 93A 140W Through Hole TO-220

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