MATSUKI · FETs & Power MOSFETs · MPN ME80N75F
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| Gate Charge(Qg) | 27.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 55.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 43.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 146pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.16nF |
N-Channel 75V 55.7A 43.4W Through Hole TO-220