MATSUKI · FETs & Power MOSFETs · MPN ME80N08A
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| Gate Charge(Qg) | 56nC@4.5V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 162A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 210W |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.5nF |
N-Channel 162A 210W Through Hole TO-220