MATSUKI ME7804S-G

MATSUKI · FETs & Power MOSFETs · MPN ME7804S-G

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage30V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)12.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)729pF
Vgs±20V

Technical details

N-Channel 30V 12.2A 3.8W Surface Mount DFN-8-EP(3.3x3.3)

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