MATSUKI ME75N03

MATSUKI · FETs & Power MOSFETs · MPN ME75N03

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)393pF
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation284W
RDS(on)5.2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)128pF
Number1 N-channel
Input Capacitance(Ciss)2.58nF
TypeN-Channel

Technical details

N-Channel 30V 71A 284W Surface Mount TO-252

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