MATSUKI ME7423S-G

MATSUKI · FETs & Power MOSFETs · MPN ME7423S-G

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)17mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.02nF
TypeP-Channel

Technical details

P-Channel 30V 17A 3.8W Surface Mount DFN-8-EP(3.3x3.3)

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