MATSUKI · FETs & Power MOSFETs · MPN ME7170-G
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 445pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.024nF |
N-Channel 30V 110A 56W Surface Mount DFN-8-EP(6.1x5.2)